IIn the electronic components and microelectronics industry, the use of diamond films (CVD diamond) is primarily because it combines a variety of extreme and excellent physical, thermal, and electrical properties, which can solve the bottleneck problems faced by modern high-power, high-frequency, and high-density electronic devices. The specific reasons include the following core aspects:

2.Extremely High Thermal Conductivity (The Ultimate Heat Dissipation Material)Modern electronic components (such as high-voltage power transistors, laser diodes, 5G/6G RF amplifiers, and CPUs) generate immense amounts of heat while pursuing miniaturization. Diamond is the material with the highest room-temperature thermal conductivity in nature, reaching up to 2000-2400 W/(m·K), which is several times that of copper. Using it as a heat sink substrate or heat spreader close to the chip's "hotspots" (such as adopting GaN-on-Diamond heterogeneous integration technology) can drastically reduce the device's junction temperature, thereby allowing the device to operate at higher power and ambient temperatures, and exponentially extending its service life.Perfect Combination of Thermal Conduction and Electrical Insulation Unlike highly thermally conductive metals such as copper or aluminum, diamond is simultaneously an excellent electrical insulator (its room-temperature resistivity can reach 1016 Ω⋅cm). This allows the diamond to directly contact electronic components for heat dissipation without the need for additional insulating layers that might impede heat conduction. It is highly suitable for packaging scenarios requiring strict electrical isolation.

3.Excellent Wide-Bandgap Semiconductor Properties Diamond is hailed as the "ultimate material" for semiconductor technology. As an ultra-wide bandgap semiconductor, it possesses a bandgap width of 5.47 eV, and a critical breakdown electric field far exceeding that of silicon and silicon carbide (10-20 MV/cm, over 33 times that of silicon). Moreover, it has extremely high carrier mobility (at room temperature, electron mobility is about 4000 cm²/V·s, and hole mobility is about 3800 cm²/V·s). These properties enable diamond to be directly used in manufacturing next-generation ultra-high voltage, ultra-high frequency, and high-temperature tolerant semiconductor components (such as Schottky diodes and field-effect transistors).

4.Extremely Low Dielectric Loss, Suitable for High-Frequency/Microwave Applications Diamond features a low dielectric constant and extremely low dielectric loss (tanδ<10−4 at 10 GHz). In microwave and high-speed digital circuits, as a substrate for passive RF resistors or high-power terminations, diamond can absorb immense thermal energy at frequencies up to 26.5 GHz or higher without causing RF signal distortion, exhibiting performance far superior to traditional Aluminum Nitride (AlN).

5.Excellent Physical/Chemical Stability and Radiation Resistance Diamond possesses extremely high mechanical strength, chemical inertness, and corrosion resistance. It is chemically inert below 300°C, and remains absolutely stable at 600°C in the air or 1200°C in a vacuum, making it very suitable for high-reliability applications like aerospace. In addition, diamond's incredibly strong radiation hardness allows it to serve stably for long periods as tracking detectors in extreme high-energy particle collision or nuclear industry environments, such as at the European Organization for Nuclear Research (CERN).

6.Excellent Thermal Expansion Matching Potential Pure diamond has a very low coefficient of thermal expansion (CTE) (approximately 0.8-1.0 × 10−6 K−1). In industrial applications, it is often combined with highly thermally conductive metals (like copper or silver) to create metal-diamond composites. These composites not only retain ultra-high thermal conductivity but can also have their CTE precisely tailored to match the levels of semiconductor chips like Silicon (Si), Silicon Carbide (SiC), or Gallium Nitride (GaN). This significantly reduces destructive shear stresses and micro-cracks generated by mismatched thermal expansion during rapid thermal cycling in the equipment.